(Hong Kong)
Product Summary
The IRFF9122 is an advanced power MOSFET. The device is designed, tested, and guranteed to withstand a specified level of energy in the breakdown avalanche mode of peration. The IRFF9122 is a p-channel enhancement-mode silicon-gate power field-effect transistor. The IRFF9122 is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. The IRFF9122 can be operated directly from integrated circuits.
Parametrics
IRFF9122 absolute maximum ratings: (1)drain-source voltage, VDS: -100V; (2)drain-gate voltage, VDGR: -100V; (3)contimuous drain current: -3.5A; (4)pulse drain current, IDM: -14A; (5)maximum power dissipation: 20W; (6)linear derating factor: 0.16W/℃; (7)single-pulse avalanche energy rating, Eas: 370mJ; (8)operating junction and storage temeprature range, Tj, Tstg: -55 to 150℃; (9)lead temperature: 300℃.
Features
IRFF9122 features: (1)single pulse advalanche energy rated; (2)SOA is power-dissipation limited; (3)nanosecond switching speeds; (4)linear transfer characteristics; (5)high input impedance.
Diagrams
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 IRFF024 |
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IRFF110 |
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IRFF120 |
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IRFF130 |
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IRFF210 |
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IRFF220 |
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