Product Summary

The BFX89 is a NPN transistor in a TO72 metal envelop, with insulated electrodes and a shield lead connected to the case. The transistor has a low noise, a very high power gain and good intermodulation properties. The BFX89 is promarily intended for channel aerial amplifiers for bands ⅠⅡ Ⅲ and Ⅳ/V (40-860MHz) and wideband aerial amplifiers (40-860MHz).

Parametrics

BFX89 absolute maximum ratings: (1)collector-base voltage, VCBOM max: 30V; (2)collector-emitter voltage (peak value) RBE≤50Ω, VCERM max: 30V; (3)collector-emitter voltage (open base), VCEO max: 15V; (4)emitter-base voltage (open collector), VEBO max: 15V; (5)collector current (dc), IC max: 25mA; (6)collector current (peak value; f>1MHz), ICM max: 50mA; (7)total power dissipation up to Tamb=25℃, Ptot max: 250mW; (8)storage temperature, Tstg: -65 to 200℃; (9)junction temperature, Tj max: 200℃.

Features

BFX89 features: (1)collector-base voltage (open emitter; peak value), VCBOM max: 30V; (2)collector-emitter voltage (open base), VCEO max: 15V; (3)collector current (peak value; f>1MHz), ICM max: 50mA; (4)total power dissipation up to Tamb=25℃, Ptot max: 200mW; (5)junction temperature, Tj max: 200℃; (6)transistion frequency, fT typ: 12GHz; (7)feedback capacitance, Cre typ: 0.6F; (8)noise figure at optimum source impedance, F typ: 3.3dB when f=200MHz; 7dB when f=800MHz; (9)power gain, Gp typ: 22dB when f=200MHz; 7dB when f=800MHz; (10)output power, PO typ: 6mW.

Diagrams

BFX85
BFX85
Other

Data Sheet
Negotiable 
BFX87
BFX87
Other

Data Sheet
Negotiable 
BFX88
BFX88
Other

Data Sheet
Negotiable