Product Summary

The K4M561633G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG high performance CMOS technology. Synchronous design of the K4M561633G allows precise cycle control with the use of system clock and I/O transactions of the K4M561633G are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Parametrics

K4M561633G absolute maximum ratings: (1)Voltage on any pin relative to Vss VIN, VOUT: -1.0 ~ 4.6 V; (2)Voltage on VDD supply relative to Vss VDD, VDDQ: -1.0 ~ 4.6 V; (3)Storage temperature TSTG: -55 ~ +150 ℃; (4)Power dissipation PD: 1.0 W; (5)Short circuit current IOS: 50 mA.

Features

K4M561633G features: (1)DQM for masking; (2)Auto refresh; (3)64ms refresh period (8K cycle); (4)Commercial Temperature Operation (-25℃ ~ 70℃); (5)Extended Temperature Operation (-25℃ ~ 85℃); (6)54Balls FBGA ( -RXXX -Pb, -BXXX -Pb Free); (7)3.0V & 3.3V power supply; (8)LVCMOS compatible with multiplexed address; (9)Four banks operation; (10)MRS cycle with address key programs; (11)EMRS cycle with address key programs; (12)All inputs are sampled at the positive going edge of the system clock; (13)Burst read single-bit write operation; (14)Special Function Support.

Diagrams

K4M561633G functional block diagram

K4M511533E-Y(P)C/L/F
K4M511533E-Y(P)C/L/F

Other


Data Sheet

Negotiable 
K4M511633E-Y(P)C/L/F
K4M511633E-Y(P)C/L/F

Other


Data Sheet

Negotiable 
K4M51163LE-Y(P)C/L/F
K4M51163LE-Y(P)C/L/F

Other


Data Sheet

Negotiable 
K4M513233E-M(E)C/L/F
K4M513233E-M(E)C/L/F

Other


Data Sheet

Negotiable 
K4M51323LE-M(E)C/L/F
K4M51323LE-M(E)C/L/F

Other


Data Sheet

Negotiable 
K4M56163PE-R(B)G/F
K4M56163PE-R(B)G/F

Other


Data Sheet

Negotiable